MASTERGAN1 Amandla Amandla Aphakeme IHalf-Bridge

Umshayeli wamandla we-STMicroelectronics 'high-density half-bridge high voltage ufaka ama-GaN HEMTs amabili we-650 V

I-STMicroelectronics 'MASTERGAN1 ingumshayeli webhuloho wokuqala ongu-600 V ohamba nohlelo lweGaN HEMT ephaketheni (i-SiP) emhlabeni nento yokuqala yesikhulumi seMASTERGAN. I-MASTERGAN1 icwecwe, okwenza kube nokwenzeka ukusebenzisa amandla kagesi aphakeme kakhulu, ngisho nokuphindwe kane kunokuphakelwa kwamandla ngokususelwa ekushintsheni kwe-MOSFET, ngenxa yemvamisa ephezulu yokushintsha kwamaGaN nokuhlanganiswa okuphezulu komshayeli nezishintshi ezimbili zeGaN ngokufanayo iphakethe. Ibuye inikeze ukuqina. Umshayeli ongaxhunyiwe ku-inthanethi wenzelwe i-GaN HEMT ngokushayela okusheshayo, okusebenzayo, nokuphephile nokwenziwa lula kokuhlelwa. Ukuphathwa kokushintshwa kwe-GaN okuqondayo kungaba nzima, kepha umshayeli oshumekiwe ulawula ukushintshwa kweGaN ukwenza lula ukwakhiwa kwamandla kagesi.